ULTRAHIGH SPEED INGAASP/INP DFB LASERS EMITTING AT 1.3 MU-M WAVELENGTH

被引：29

作者：

KAMITE, K

SUDO, H

YANO, M

ISHIKAWA, H

IMAI, H

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

10.1109/JQE.1987.1073409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bandwidth of 13 GHz has been attained in a 1. 3- mu m distributed feedback laser at 25 degree C. A mesa structure was introduced to reduce the parasitic capacitance and the lasing wavelength was detuned from the gain peak to increase the differential gain.

引用

页码：1054 / 1058

页数：5

共 29 条

[1] EFFECT OF FIBER-FAR-END REFLECTIONS ON INTENSITY AND PHASE NOISE IN INGAASP SEMICONDUCTOR-LASERS
AGRAWAL, GP
OLSSON, NA
DUTTA, NK
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 597 - 599
[2] HIGH-FREQUENCY CONSTRICTED MESA LASERS
BOWERS, JE
HEMENWAY, BR
GNAUCK, AH
BRIDGES, TJ
BURKHARDT, EG
WILT, DP
MAYNARD, S
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 78 - 80
[3] MICROWAVE INTENSITY AND FREQUENCY-MODULATION OF HETEROEPITAXIAL-RIDGE-OVERGROWN DISTRIBUTED FEEDBACK LASERS
BOWERS, JE
TSANG, WT
KOCH, TL
OLSSON, NA
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 233 - 365
[4] CHENG WH, 1986, 10TH IEEE INT SEM LA
[5] FUJITA S, 1986, P ECOC 86, P507
[6] 4 GBIT/S DIRECT MODULATION OF 1.3 MU-M INGAASP/INP SEMICONDUCTOR-LASERS
HAGIMOTO, K
OHTA, N
NAKAGAWA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 796 - 798
[7] 1.3-MU-M BH LASER PERFORMANCE AT MICROWAVE-FREQUENCIES
HAKKI, BW
BOSCH, F
LUMISH, S
DIETRICH, NR
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) : 1193 - 1201
[8] ISHIKAWA H, 1986, IN PRESS FIJITSU SCI, V22
[9] KAMITE K, 1986, ELECTRON LETT, V22, P407, DOI 10.1049/el:19860278
[10] 3-CHANNEL BURIED-CRESCENT INGAASP LASER WITH 1.51-MU-M WAVELENGTH ON SEMI-INSULATING INP
KOREN, U
ARAI, S
TIEN, PK
[J]. ELECTRONICS LETTERS, 1984, 20 (04) : 177 - 178

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