1.3-MU-M BH LASER PERFORMANCE AT MICROWAVE-FREQUENCIES

被引：2

作者：

HAKKI, BW ^{[1
]}

BOSCH, F ^{[1
]}

LUMISH, S ^{[1
]}

DIETRICH, NR ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1109/JLT.1985.1074355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1193 / 1201

页数：9

共 54 条

[1] DIRECT MODULATION OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
AKIBA, S
SAKAI, K
YAMAMOTO, T
[J]. ELECTRONICS LETTERS, 1978, 14 (06) : 197 - 198
[2] ALBRECHT W, 1982, IEEE J QUANTUM ELECT, V18, P1547, DOI 10.1109/TMTT.1982.1131287
[3] EFFECTIVE REFRACTIVE-INDEX AND 1ST-ORDER-MODE CUTOFF CONDITIONS IN INGAASP/INP DH LASER STRUCTURES (LAMBDA=1.2-1.6-MU-)
BOTEZ, D
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (05) : 865 - 870
[4] HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS
CAMPBELL, JC
DENTAI, AG
HOLDEN, WS
KASPER, BL
[J]. ELECTRONICS LETTERS, 1983, 19 (20) : 818 - 820
[5] REFRACTIVE-INDEX DATA FROM GAXIN1-XASYP1-Y FILMS
CHANDRA, P
COLDREN, LA
STREGE, KE
[J]. ELECTRONICS LETTERS, 1981, 17 (01) : 6 - 7
[6] GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
DUTTA, NK
NELSON, RJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) : 44 - 49
[7] HIGH-FREQUENCY CHARACTERISTICS OF GAAIAS INJECTION-LASERS
FIGUEROA, L
SLAYMAN, CW
YEN, HW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) : 1718 - 1727
[8] REDUCTION OF RESONANCE-LIKE PEAK IN DIRECT MODULATION DUE TO CARRIER DIFFUSION IN INJECTION-LASER
FURUYA, K
SUEMATSU, Y
HONG, T
[J]. APPLIED OPTICS, 1978, 17 (12): : 1949 - 1952
[9] 4 GBIT/S DIRECT MODULATION OF 1.3 MU-M INGAASP/INP SEMICONDUCTOR-LASERS
HAGIMOTO, K
OHTA, N
NAKAGAWA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (18) : 796 - 798
[10] HIGH-FREQUENCY IMPEDANCE OF PROTON-BOMBARDED INJECTION-LASERS
HAKKI, BW
HOLBROOK, WR
GAW, CA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1983, 62 (02): : 463 - 475

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