GROWTH OF ZINC SELENIDE THIN-FILMS

被引：11

作者：

DAWAR, AL ^{[1
]}

SHISHODIA, PK ^{[1
]}

MATHUR, PC ^{[1
]}

机构：

[1] UNIV DELHI,DEPT PHYS & ASTROPHYS,DELHI 110007,INDIA

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1989年 / 8卷 / 05期

关键词：

D O I：

10.1007/BF00720298

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：561 / 562

页数：2

共 8 条

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[2]

BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P233

[3] PHOTO-LUMINESCENCE IN ZNSE GROWN BY LIQUID-PHASE EPITAXY FROM ZN-GA SOLUTION [J].

FUJITA, S ;

MIMOTO, H ;

NOGUCHI, T .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :1079-1087

[4]

Maissel LI., 1980, HAND BOOK THIN FILM

[5] VAPOR AND SOLID-PHASE EPITAXIES OF ZNSE FILMS ON (100)GAAS USING METALLIC ZN AND SE [J].

MURANOI, T ;

FURUKOSHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08) :L517-L519

[6] PREPARATION AND CHARACTERIZATION OF CLOSE-SPACED VAPOR TRANSPORT THIN-FILMS OF ZNSE FOR HETEROJUNCTION SOLAR-CELLS [J].

PAWLIKOWSKI, JM .

THIN SOLID FILMS, 1985, 127 (1-2) :9-27

[7] CONDUCTION MECHANISM IN LOW-RESISTIVITY N-TYPE ZNSE PREPARED BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

STUTIUS, W .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :284-291

[8] HIGH-QUALITY ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

YAO, T ;

OGURA, M ;

MATSUOKA, S ;

MORISHITA, T .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :499-501

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