EFFECT OF ALUMINUM LINEWIDTH ON ANNEALING OF FAST STATES IN MOS STRUCTURES

被引：1

作者：

SCHLEGEL, ES

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 06期

关键词：

D O I：

10.1109/T-ED.1972.17503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：839 / &

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