ENHANCEMENT OF COULOMB-BLOCKADE IN SEMICONDUCTOR TUNNEL-JUNCTIONS

被引：15

作者：

NAKAZATO, K ^{[1
]}

AHMED, H ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CTR MICROELECTR RES,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 23期

关键词：

D O I：

10.1063/1.113712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Coulomb blockade region was measured directly in an experimental single-electron memory device. The device was constructed with multiple-tunnel junctions (MTJ) formed by making a sidegated constriction in δ-doped GaAs. The Coulomb blockade region is defined by electron transfer rates of less than 10 electrons per second. At low values of sidegate voltages in the MTJ an enhancement of the Coulomb blockade is observed and explained by the formation of a nonuniform electrostatic potential in the semiconductor tunnel junctions.© 1995 American Institute of Physics.

引用

页码：3170 / 3172

页数：3

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