THE ENERGETICS OF THE RELIEF OF MISFIT STRAIN IN INASYP1-Y FILMS GROWN ON [100] INP SUBSTRATES BY MEANS OF 3 SETS OF DISLOCATIONS

被引：6

作者：

DYNNA, M ^{[1
]}

WEATHERLY, GC ^{[1
]}

机构：

[1] MCMASTER UNIV,DEPT MAT SCI & ENGN,HAMILTON,ON L8S 4L7,CANADA

来源：

SCRIPTA METALLURGICA ET MATERIALIA | 1995年 / 32卷 / 10期

关键词：

D O I：

10.1016/0956-716X(94)00023-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：1565 / 1571

页数：7

共 4 条

[1] THE NATURE OF DISLOCATION SOURCES AND STRAIN RELIEF IN INASYP1-Y FILMS GROWN ON (100) INP SUBSTRATES
DYNNA, M
OKADA, T
WEATHERLY, GC
[J]. ACTA METALLURGICA ET MATERIALIA, 1994, 42 (05): : 1661 - 1672
[2] THE ENERGY OF ARRAYS OF DISLOCATIONS IN AN ANISOTROPIC HALF-SPACE
GOSLING, TJ
WILLIS, JR
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1994, 69 (01): : 65 - 90
[3] ATOMIC-STRUCTURE OF DISLOCATIONS IN SILICON, GERMANIUM AND DIAMOND
NANDEDKAR, AS
NARAYAN, J
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1990, 61 (06): : 873 - 891
[4] THE ENERGY OF AN ARRAY OF DISLOCATIONS - IMPLICATIONS FOR STAIN RELAXATION IN SEMICONDUCTOR HETEROSTRUCTURES
WILLIS, JR
JAIN, SC
BULLOUGH, R
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1990, 62 (01): : 115 - 129