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OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELING DIODE MODELING

被引：45
作者：
MAINS, RK
SUN, JP
HADDAD, GI
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 04期
关键词：
D O I：
10.1063/1.101874
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：371 / 373
页数：3
相关论文
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