RESONANT TUNNELING AND INTRINSIC BISTABILITY IN ASYMMETRIC DOUBLE-BARRIER HETEROSTRUCTURES

被引：119

作者：

ZASLAVSKY, A ^{[1
]}

GOLDMAN, VJ ^{[1
]}

TSUI, DC ^{[1
]}

CUNNINGHAM, JE ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.99956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1408 / 1410

页数：3

共 18 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[2]

EAVES L, UNPUB

[3] WIGNER-FUNCTION MODEL OF A RESONANT-TUNNELING SEMICONDUCTOR-DEVICE [J].

FRENSLEY, WR .

PHYSICAL REVIEW B, 1987, 36 (03) :1570-1580

[4] BREAKDOWN OF COHERENCE IN RESONANT TUNNELING THROUGH DOUBLE-BARRIER HETEROSTRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :731-734

[5] RESONANT TUNNELING IN MAGNETIC-FIELDS - EVIDENCE FOR SPACE-CHARGE BUILDUP [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW B, 1987, 35 (17) :9387-9390

[6] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - REPLY [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 59 (14) :1623-1623

[7] EVIDENCE FOR LO-PHONON-EMISSION-ASSISTED TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW B, 1987, 36 (14) :7635-7637

[8] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[9]

GOLDMAN VJ, 1988, B AM PHYS SOC, V33, P254

[10] FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].

LURYI, S .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492

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