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A PULSE METHOD FOR MEASURING THE INJECTION RATIO OF METAL-SEMICONDUCTOR CONTACTS

被引：4
作者：
LOW, GGE
机构：
来源：
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1955年 / 68卷 / 07期
关键词：
D O I：
10.1088/0370-1301/68/7/306
中图分类号：
Q [生物科学];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：447 / 452
页数：6
相关论文
共 5 条
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[3]   CURRENT MULTIPLICATION PROCESSES IN N-TYPE GERMANIUM POINT-CONTACT TRANSISTORS [J].
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[4]   MEASUREMENT OF MINORITY CARRIER LIFETIME AND CONTACT INJECTION RATIO ON TRANSISTOR MATERIALS [J].
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[5]   HOLE INJECTION IN GERMANIUM QUANTITATIVE STUDIES AND FILAMENTARY TRANSISTORS [J].
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BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :344-366
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