共 4 条
1.3-MU-M INGAASP FABRY-PEROT LASERS WITH REDUCED PULSE JITTER AND POWER PENALTY
被引:2
作者:
CHENG, WH
DUGAN, JM
MILLER, JC
RENNER, D
MCDERMOTT, TC
SU, CB
机构:
[1] TACAN CORP,CARLSBAD,CA 92008
[2] ORTEL CORP,ALHAMBRA,CA 91803
[3] TEXAS A&M UNIV SYST,COLLEGE STN,TX 77843
关键词:
OPTICAL COMMUNICATION;
SEMICONDUCTOR LASERS;
D O I:
10.1049/el:19920849
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The pulse jitter and bit-error-rate performances of a 1.2 Gbit/s lightwave transmission system using 1.3 mum InGaAsP Fabry-Perot (FP) lasers with Zn-doped active layers were investigated experimentally. It was found that the pulse jitter and the resulting power penalty were strongly dependent on the carrier lifetime of the lasers. This suggests that doped-active FP lasers with decreased carrier lifetime may be usable in a wider range of gigabit lightwave applications than previously considered.
引用
收藏
页码:1337 / 1338
页数:2
相关论文