LATERAL-SUPERLATTICE EFFECTS IN VERY NARROW STRAINED SEMICONDUCTOR QUANTUM-WELLS GROWN ON VICINAL SURFACES

被引：11

作者：

MESEGUER, F

AGULLORUEDA, F

LOPEZ, C

SANCHEZDEHESA, J

MASSIES, J

CESCHIN, AM

机构：

[1] LAB PHYS SOLIDE & ENERGIE SOLAIRE,CNRS,F-06560 VALBONNE,FRANCE

[2] UNIV AUTONOMA MADRID,FAC CIENCIAS,DIV FIS,E-28049 MADRID,SPAIN

[3] UNIV CARLOS 3 MADRID,ESCUELA POLITECN SUPER,E-28913 MADRID,SPAIN

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13880

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The existence of lateral-superlattice effects in narrow InxGa1-xAs/GaAs strained quantum wells grown on GaAs vicinal substrates is reported. The effects have been probed by photoluminescence excitation under magnetic field and compared to a theoretical model. Prior work indicates that strained epitaxial layers grown on vicinal surfaces may present a tilt angle between the substrate plane and the epilayer plane that depends on the lattice mismatch. This provokes strong lateral modulation of the potential induced by inhomogeneity of the built-in strain. Our results are consistent with strong lateral-superlattice effects.

引用

页码：13880 / 13883

页数：4

共 19 条

[1] ARENT DJ, 1991, CONDENSED SYSTEMS LO
[2] X-RAY-DIFFRACTION EFFECTS IN GA AND AL ARSENIDE STRUCTURES MBE-GROWN ON SLIGHTLY MISORIENTED GAAS (001) SUBSTRATES
AUVRAY, P
BAUDET, M
REGRENY, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 288 - 291
[3] STRAIN INDUCED 2D-3D GROWTH MODE TRANSITION IN MOLECULAR-BEAM EPITAXY OF INXGA1-XAS ON GAAS (001)
CESCHIN, AM
MASSIES, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 693 - 699
[4] OPTICAL-PROPERTIES OF A SINGLE STRAINED INGAAS/GAAS QUANTUM-WELL GROWN ON VICINAL GAAS-SURFACES
DROOPAD, R
PUECHNER, RA
SHIRALAGI, KT
CHOI, KY
MARACAS, GN
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (16) : 1777 - 1779
[5] MONOLAYER-SCALE OPTICAL INVESTIGATION OF SEGREGATION EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES
GERARD, JM
MARZIN, JY
[J]. PHYSICAL REVIEW B, 1992, 45 (11): : 6313 - 6316
[6] CONCENTRATION-DEPENDENT BAND OFFSET IN INXGA1-XAS/GAAS STRAINED QUANTUM WELLS
JOYCE, MJ
JOHNSON, MJ
GAL, M
USHER, BF
[J]. PHYSICAL REVIEW B, 1988, 38 (15): : 10978 - 10980
[7] STRAIN-INDUCED LATERAL CONFINEMENT OF EXCITONS IN GAAS-ALGAAS QUANTUM WELL MICROSTRUCTURES
KASH, K
WORLOCK, JM
STURGE, MD
GRABBE, P
HARBISON, JP
SCHERER, A
LIN, PSD
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (09) : 782 - 784
[8] ONE-DIMENSIONAL MAGNETOEXCITONS IN GAAS/ALXGA1-XAS QUANTUM WIRES
KOHL, M
HEITMANN, D
GRAMBOW, P
PLOOG, K
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (19) : 2124 - 2127
[9] LANDESMAN JP, IN PRESS PHYSICAL PR
[10] X-RAY-DIFFRACTION CHARACTERIZATION OF SUPERLATTICES GROWN ON OFFCUT (100) SUBSTRATES
MAIGNE, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (03): : 489 - 492

← 1 2 →