X-RAY-DIFFRACTION EFFECTS IN GA AND AL ARSENIDE STRUCTURES MBE-GROWN ON SLIGHTLY MISORIENTED GAAS (001) SUBSTRATES

被引：53

作者：

AUVRAY, P

BAUDET, M

REGRENY, A

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90403-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：288 / 291

页数：4

共 11 条

[1] EFFECT OF SUBSTRATE TILTING ON MOLECULAR-BEAM EPITAXIAL GROWN ALGAAS/GAAS LASERS HAVING VERY LOW THRESHOLD CURRENT DENSITIES [J].

CHEN, HZ ;

GHAFFARI, A ;

MORKOC, H ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2094-2096

[2] DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS [J].

ESTOP, E ;

IZRAEL, A ;

SAUVAGE, M .

ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (JUL1) :627-&

[3] (ALAS)0.5(GAAS)0.5 FRACTIONAL-LAYER SUPERLATTICES GROWN ON (001) VICINAL SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FUKUI, T ;

SAITO, H .

APPLIED PHYSICS LETTERS, 1987, 50 (13) :824-826

[4]

KERVAREC J, 1984, J APPL CRYSTALLOGR, V17, P1986

[5] X-RAY REFRACTIVE-INDEX - A TOOL TO DETERMINE THE AVERAGE COMPOSITION IN MULTILAYER STRUCTURES [J].

MICELI, PF ;

NEUMANN, DA ;

ZABEL, H .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :24-26

[6] STRUCTURE OF VAPOR-DEPOSITED GAXIN1-XAS CRYSTALS [J].

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3789-3794

[7]

NEUMAN DA, 1985, MATERIALS RES SOC S, V37, P47

[8] X-RAY EVIDENCE FOR A TERRACED GAAS ALAS SUPER-LATTICE [J].

NEUMANN, DA ;

ZABEL, H ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :59-61

[9] STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :620-622

[10]

TAPFER L, 1987, 3RD INT C MOD SEM ST, P445

← 1 2 →