LOCAL EPITAXIAL-GROWTH OF DIAMOND ON NICKEL FROM THE VAPOR-PHASE

被引：20

作者：

SATO, Y ^{[1
]}

FUJITA, H ^{[1
]}

ANDO, T ^{[1
]}

TANAKA, T ^{[1
]}

KAMO, M ^{[1
]}

机构：

[1] ONODA CEMENT CO LTD, CENT RES LAB, SAKURA, CHIBA 285, JAPAN

来源：

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1993年 / 342卷 / 1664期

关键词：

D O I：

10.1098/rsta.1993.0016

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Deposition of diamond on nickel substrates has been performed by a microwave plasma reactor from methane-hydrogen gas mixtures. Growth features and the structures of the deposits have been studied as functions of methane concentration (0.3-5.0% (by volume)) and substrate temperature (700-1000-degrees-C). At methane concentrations lower than 0.9 %, diamond crystals, which have epitaxial relation to the substrate, have been observed to grow both on (111) and (100) faces of nickel. Other phenomena not observed with usual substrates have also been noted, and are believed to be caused by the unique properties of nickel.

引用

页码：225 / 231

页数：7

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