STACKING-FAULTS IN HEXAGONAL AND RHOMBOHEDRAL MOS2 CRYSTALS PRODUCED BY MECHANICAL OPERATION IN RELATION TO LUBRICATION

被引:14
作者
TAKAHASHI, N [1 ]
SHIOJIRI, M [1 ]
机构
[1] KYOTO INST TECHNOL,SAKYO KU,KYOTO 606,JAPAN
关键词
D O I
10.1016/0043-1648(93)90321-C
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
The crystal structure of synthesized MoS2 was observed by high resolution transmission electron microscopy to have a rhombohedral lattice of three sandwich S-Mo-S layers of ABC stacking uniformly spaced through 0.615 nm. An extra half-plane observed in the layer lattice image from an ultramicrotomed section of this crystal suggested the appearance of a stacking fault due to a Shockley partial dislocation as in the case of h.c.p. MoS2 (molybdenite). The direction of the occurrence of transformation was reversed to that in the h.c.p. MoS2 case (h.c.p.-->rhombohedral) by missing one layer in the rhombohedral stacking and this transformation leads to the appearance of a stacking fault, slip, twinning and h.c.p. lattice formation in the slip regions, due to S-S glide. All these transformations have been observed in the well-determined orientation [2110BAR] parallel to the electron beam on an atomic scale. The slip mechanism was interpreted in terms of the fundamental unit common to f.c.c., h.c.p. and rhombohedral lattices, elucidating the origin of easy glide in the characteristic crystal structure of MoS2. Mo-S glide which entails deformation of the MoS2 trigonal prism was proposed to form an S vacancy.
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页码:163 / 171
页数:9
相关论文
共 18 条
[1]  
AMELINCKX S, 1964, DIRECT OBSERVATION D, P274
[2]  
BURNS G, 1985, SOLID STATE PHYS, P158
[3]  
CLAUSS FJ, 1972, SOLID LUBRICANTS SEL, P43
[4]   FUNDAMENTAL-ASPECTS OF THE ELECTRONIC-STRUCTURE, MATERIALS PROPERTIES AND LUBRICATION PERFORMANCE OF SPUTTERED MOS2 FILMS [J].
FLEISCHAUER, PD .
THIN SOLID FILMS, 1987, 154 (1-2) :309-322
[5]  
FLEISCHER PD, 1990, SSDTR9009 SPAC SYST
[6]  
ISSHIKI T, UNPUB THIN SOLID FIL
[7]  
JAMISON W, 1984, 3RD P ASLE INT C SOL, P73
[8]  
JAMISON WE, 1972, ASLE TRANS, V15, P296
[9]  
Merzhanov A., 1982, Jpn Patent, Patent No. [1 098-839, 1098839]
[10]  
READ WT, 1963, DISLOCATIONS CRYSTAL, P110