MODULATION OF ONE-DIMENSIONAL ELECTRON-DENSITY IN N-ALGAAS/GAAS EDGE QUANTUM-WIRE TRANSISTOR

被引：29

作者：

NAKAMURA, Y ^{[1
]}

TSUCHIYA, M ^{[1
]}

KOSHIBA, S ^{[1
]}

NOGE, H ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 19期

关键词：

D O I：

10.1063/1.111571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An array of AlGaAs/GaAs edge quantum wires (EQWIs) with an effective width of 80 nm was successfully prepared on a (111)B microfacet structure on a patterned substrate by molecular beam epitaxy. By forming a gate electrode on the wires, field effect transistor action has been successfully demonstrated. The conductance of the wire measured in magnetic fields has exhibited a clear Shubnikov-de Haas (SdH) oscillation, and its Landau plot shows a characteristic nonlinearity caused by the magnetic depopulation of one-dimensional (1D) subbands. It has been found that as the gate voltage decreases, the SdH peaks shift systematically toward lower magnetic fields, indicating a successful modulation of 1D electron density in the EQWI.

引用

页码：2552 / 2554

页数：3

共 11 条

[1] CHARACTERIZATION OF VERY NARROW QUASI-ONE-DIMENSIONAL QUANTUM CHANNELS [J].

BERGGREN, KF ;

ROOS, G ;

VANHOUTEN, H .

PHYSICAL REVIEW B, 1988, 37 (17) :10118-10124

[2] NEW GAAS QUANTUM WIRES ON (111)B FACETS BY SELECTIVE MOCVD [J].

FUKUI, T ;

ANDO, S .

ELECTRONICS LETTERS, 1989, 25 (06) :410-412

[3]

MATOHISA J, 1993, APPL PHYS LETT, V63, P1786

[4] ENHANCED CRYSTALLOGRAPHIC SELECTIVITY IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON MESAS AND FORMATION OF (001)-(111)B FACET STRUCTURES FOR EDGE QUANTUM WIRES [J].

NAKAMURA, Y ;

KOSHIBA, S ;

TSUCHIYA, M ;

KANO, H ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1991, 59 (06) :700-702

[5] FORMATION OF N-ALGAAS/GAAS EDGE QUANTUM-WIRE ON (111)B MICRO FACET BY MBE AND MAGNETIC DEPOPULATION OF QUASI-ONE-DIMENSIONAL ELECTRON-GAS [J].

NAKAMURA, Y ;

TSUCHIYA, M ;

MOTOHISA, J ;

NOGE, H ;

KOSHIBA, S ;

SAKAKI, H .

SOLID-STATE ELECTRONICS, 1994, 37 (4-6) :571-573

[6] FORMATION OF 2-DIMENSIONAL ELECTRON-GAS IN N-ALGAAS/GAAS HETEROJUNCTIONS ON (111)B MICROFACETS GROWN BY MOLECULAR-BEAM EPITAXY ON A PATTERNED (001) SUBSTRATE [J].

NAKAMURA, Y ;

TSUCHIYA, M ;

KOSHIBA, S ;

NOGE, H ;

KANO, H ;

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (3B) :L383-L385

[7] FORMATION OF A HIGH-QUALITY 2-DIMENSIONAL ELECTRON-GAS ON CLEAVED GAAS [J].

PFEIFFER, L ;

WEST, KW ;

STORMER, HL ;

EISENSTEIN, JP ;

BALDWIN, KW ;

GERSHONI, D ;

SPECTOR, J .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1697-1699

[8] SCATTERING SUPPRESSION AND HIGH-MOBILITY EFFECT OF SIZE-QUANTIZED ELECTRONS IN ULTRAFINE SEMICONDUCTOR WIRE STRUCTURES [J].

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :L735-L738

[9] ATOMICALLY PRECISE SUPERLATTICE POTENTIAL IMPOSED ON A 2-DIMENSIONAL ELECTRON-GAS [J].

STORMER, HL ;

PFEIFFER, LN ;

BALDWIN, KW ;

WEST, KW ;

SPECTOR, J .

APPLIED PHYSICS LETTERS, 1991, 58 (07) :726-728

[10] OPTIMUM GROWTH-CONDITIONS OF GAAS(111)B LAYERS FOR GOOD ELECTRICAL-PROPERTIES BY MOLECULAR-BEAM EPITAXY [J].

TSUTSUI, K ;

MIZUKAMI, H ;

ISHIYAMA, O ;

NAKAMURA, S ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (03) :468-474

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