ELECTRONIC TRANSPORT-PROPERTIES IN 1T-TAS2

被引：16

作者：

TANI, T

OKAJIMA, K

ITOH, T

TANAKA, S

机构：

来源：

PHYSICA B & C | 1981年 / 105卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(81)90230-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：127 / 131

页数：5

共 19 条

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[3]

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DOLAN, GJ ;

OSHEROFF, DD .

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PHYSICA B & C, 1980, 99 (1-4) :183-187

[7] ELECTRICAL, STRUCTURAL AND MAGNETIC-PROPERTIES OF PURE AND DOPED 1T-TAS2 [J].

FAZEKAS, P ;

TOSATTI, E .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03) :229-244

[8] NEGATIVE MAGNETORESISTANCE IN THE ANDERSON LOCALIZED STATES [J].

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YOSIDA, K .

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[9]

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[10] HALL-EFFECT OF 1T-TAS2 [J].

INADA, R ;

ONUKI, Y ;

TANUMA, S .

PHYSICS LETTERS A, 1979, 69 (06) :453-456

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