DESIGN AND CONSTRUCTION OF A DIRECT-PLOTTING CAPACITANCE INVERSE-DOPING PROFILER FOR SEMICONDUCTOR EVALUATION

被引：6

作者：

SPIWAK, RR

机构：

[1] Bell Telephone Laboratories, Inc., Murray Hill

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1969年 / IM18卷 / 03期

关键词：

D O I：

10.1109/TIM.1969.4313800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique involving harmonic generation in measuring the doping profile normal to the surface of semiconductor epitaxial wafers has been developed. This method has been used in the construction of a direct-plotting inverse-doping profiler which can determine the doping concentration with an absolute accuracy of about 10 percent and a relative accuracy of a few per-cent. The depth resolution is on the order of a Debye length. The profiler has the advantages of providing immediate results and accuracy at low cost. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：197 / &