CRYSTAL GROWTH OF 2H SILICON CARBIDE

被引：27

作者：

POWELL, JA

机构：

[1] National Aeronautics and Space Administration, Lewis Research Center, Cleveland

来源：

关键词：

D O I：

10.1063/1.1657249

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：4660 / &

共 9 条

[1]

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[2]

KNIPPENBERG WF, 1969, SILICON CARBIDE 1968, P33

[3]

Knippenberg WF., 1963, PHILIPS RES REP, V18, P161

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[5] HIGH ELECTRON MOBILITY OF CUBIC SIC [J].

PATRICK, L .

[6]

RYAN CE, 1966, AFCRL66641

[7]

SOKHOR MI, 1965, SOV PHYS CRYSTALLOGR, V10, P341

[8] MECHANISM OF BRANCHING AND KINKING DURING VLS CRYSTAL GROWTH [J].

WAGNER, RS ;

DOHERTY, CJ .

WAGNER, RS ;

ELLIS, WC .