DEEP DEFECT STRUCTURE AND CARRIER DYNAMICS IN AMORPHOUS-SILICON AND SILICON-GERMANIUM ALLOYS DETERMINED BY TRANSIENT PHOTOCAPACITANCE METHODS

被引：31

作者：

COHEN, JD ^{[1
]}

UNOLD, T ^{[1
]}

GELATOS, AV ^{[1
]}

FORTMANN, CM ^{[1
]}

机构：

[1] UNIV DELAWARE,INST ENERGY CONVERS,NEWARK,DE 19716

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 141卷 / 1-3期

关键词：

D O I：

10.1016/S0022-3093(05)80528-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A detailed comparison between transient junction photocurrent and photocapacitance spectra can be used to examine separately the majority and minority carrier processes in amorphous semiconductors. Such methods are employed both on intrinsic samples of hydrogenated amorphous silicon (a-Si:H) and also amorphous silicon-germanium alloys (a-Si,Ge:H) with a Tauc gap near 1.3 eV. It is demonstrated how this method can be used not only to map out the deep defect distribution in such samples, but also to determine the effective mu-tau products for the minority carrier motion.

引用

页码：142 / 154

页数：13

共 18 条

[1] MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON [J].