MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON

被引：9

作者：

ALBRIGHT, DE

SAXENA, N

FORTMANN, CM

ROCHELEAU, RE

RUSSELL, TWF

机构：

[1] UNIV DELAWARE,DEPT CHEM ENGN,NEWARK,DE 19716

[2] UNIV DELAWARE,INST ENERGY CONVERS,NEWARK,DE 19716

来源：

AICHE JOURNAL | 1990年 / 36卷 / 10期

关键词：

Chemical Reactions--Reaction Kinetics - Mathematical Techniques--Boundary Value Problems - Semiconducting Films--Chemical Vapor Deposition - Silanes--Photochemical Reactions;

D O I：

10.1002/aic.690361011

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

A reaction engineering model has been developed to describe the mercury‐sensitized photochemical vapor deposition of hydrogenated amorphous silicon (a‐Si:H) semiconductor thin films. Model equations governing the gas‐phase generation, transport, and surface reactions of SiH3 and H film precursor radicals are solved to predict film growth rate and bonded hydrogen content. Behavior of the model has been studied as a function of deposition conditions (pressure, temperature, feed composition, and flow rates) and has been verified by comparison with experimental results. Copyright © 1990 American Institute of Chemical Engineers

引用

页码：1555 / 1561

页数：7

共 26 条

[1]

ADLER D, 1985, PHYSICAL PROPERTIES, P5

[2]

[Anonymous], 1987, PROPERTIES GASES LIQ

[3] RATE CONSTANTS FOR REACTIONS OF HYDROGEN-ATOMS WITH SOME SILANES AND GERMANES [J].