ION-IMPLANTED HYPERABRUPT JUNCTION VOLTAGE VARIABLE CAPACITORS

被引：22

作者：

MOLINE, RA

FOXHALL, GF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 02期

关键词：

D O I：

10.1109/T-ED.1972.17406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：267 / +

页数：1

共 12 条

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[2]

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[4] SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].

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SZE, SM .

BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02) :195-+

[5]

MAYER JW, ION IMPLANTATION SEM

[6]

MOLINE RA, 1971, J APPL PHYS

[7] SILICON VARIABLE CAPACITANCE DIODES WITH HIGH VOLTAGE SENSITIVITY BY LOW TEMPERATURE EPITAXIAL GROWTH [J].

NAKANUMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) :578-+

[8] VOLTAGE VARIABLE CAPACITOR TUNING - A REVIEW [J].

NORWOOD, MH .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (05) :788-+

[9]

SHIMIZU A, 1961, IRE T ELECTRON DEV, VED8, P370

[10]

SHINODA M, 1964, J I ELECT COMMUN ENG, V47, P14

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