ION-IMPLANTED HYPERABRUPT JUNCTION VOLTAGE VARIABLE CAPACITORS

被引:22
作者
MOLINE, RA
FOXHALL, GF
机构
关键词
D O I
10.1109/T-ED.1972.17406
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:267 / +
页数:1
相关论文
共 12 条
[1]   HYPERABRUPT JUNCTIONS IN AU-SI SCHOTTKY DIODES BY ION IMPLANTATION [J].
BROOK, P ;
WHITEHEAD, CS .
ELECTRONICS LETTERS, 1968, 4 (16) :335-+
[2]  
FOXHALL GF, 1969, OCT IEEE INT EL DEV
[3]   ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].
KENNEDY, DP ;
MURLEY, PC ;
KLEINFELDER, W .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) :399-+
[4]   SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].
LEPSELTE.MP ;
SZE, SM .
BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02) :195-+
[5]  
MAYER JW, ION IMPLANTATION SEM
[6]  
MOLINE RA, 1971, J APPL PHYS
[8]   VOLTAGE VARIABLE CAPACITOR TUNING - A REVIEW [J].
NORWOOD, MH .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (05) :788-+
[9]  
SHIMIZU A, 1961, IRE T ELECTRON DEV, VED8, P370
[10]  
SHINODA M, 1964, J I ELECT COMMUN ENG, V47, P14