HYPERABRUPT JUNCTIONS IN AU-SI SCHOTTKY DIODES BY ION IMPLANTATION

被引：8

作者：

BROOK, P

WHITEHEAD, CS

机构：

来源：

ELECTRONICS LETTERS | 1968年 / 4卷 / 16期

关键词：

D O I：

10.1049/el:19680262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：335 / +

页数：1

共 9 条

[1] A VAPOR-GROWN VARIABLE CAPACITANCE DIODE [J].

ANDERSON, RL ;

OROURKE, MJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :264-268

[2]

CHANG JJ, 1963, IEEE T ELECTRON DEV, VED10, P281

[3] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[4] Ion-Implantation Doping of Semiconductors [J].

Large, L. N. ;

Bicknell, R. W. .

JOURNAL OF MATERIALS SCIENCE, 1967, 2 (06) :589-609

[5] SILICON VARIABLE CAPACITANCE DIODES WITH HIGH VOLTAGE SENSITIVITY BY LOW TEMPERATURE EPITAXIAL GROWTH [J].

NAKANUMA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) :578-+

[6]

NATHANSON HC, 1962, SEMICONDUCTOR PROD 1, V5, P38

[7]

NATHANSON HC, 1962, SEMICONDUCTOR PROD 2, V5, P24

[8] SILICON ALLOY-DIFFUSED VARIABLE CAPACITANCE DIODE [J].

SUKEGAWA, T ;

FUJIKAWA, K ;

NISHIZAWA, J .

SOLID-STATE ELECTRONICS, 1963, 6 (01) :1-24

[9] METAL-SILICON SCHOTTKY BARRIERS [J].

TURNER, MJ ;

RHODERICK, EH .

SOLID-STATE ELECTRONICS, 1968, 11 (03) :291-+

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