A VAPOR-GROWN VARIABLE CAPACITANCE DIODE

[1] GIACOLETTO LJ, 1956, RCA REV, V17, P68

[2] HILIBRAND J, 1959, RCA REV, V20, P229

[3] JORSBOE H, 1959, P IRE, V47, P591

[4] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[5] ALLOYED, THIN-BASE DIODE CAPACITORS FOR PARAMETRIC AMPLIFICATION [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1542 - 1548

[6] ELECTRICAL PROPERTIES OF VAPOR-GROWN GE JUNCTIONS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 256 - 263

[7] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[8] THE POTENTIAL OF SEMICONDUCTOR DIODES IN HIGH-FREQUENCY COMMUNICATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1099 - 1115

[9] ON THE MIXING PROPERTIES OF NON-LINEAR CONDENSERS [J]. JOURNAL OF APPLIED PHYSICS, 1948, 19 (11) : 999 - 1006

[1] GIACOLETTO LJ, 1956, RCA REV, V17, P68

[2] HILIBRAND J, 1959, RCA REV, V20, P229

[3] JORSBOE H, 1959, P IRE, V47, P591

[4] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255

[5] ALLOYED, THIN-BASE DIODE CAPACITORS FOR PARAMETRIC AMPLIFICATION [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1542 - 1548

[6] ELECTRICAL PROPERTIES OF VAPOR-GROWN GE JUNCTIONS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 256 - 263

[7] Simplified and advanced Theory of the Boundary Layer Rectifiers [J]. ZEITSCHRIFT FUR PHYSIK, 1942, 118 (9-10): : 539 - 592

[8] THE POTENTIAL OF SEMICONDUCTOR DIODES IN HIGH-FREQUENCY COMMUNICATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1099 - 1115

[9] ON THE MIXING PROPERTIES OF NON-LINEAR CONDENSERS [J]. JOURNAL OF APPLIED PHYSICS, 1948, 19 (11) : 999 - 1006