ELECTRICAL PROPERTIES OF VAPOR-GROWN GE JUNCTIONS

被引：10

作者：

OROURKE, MJ

MARINACE, JC

ANDERSON, RL

WHITE, WH

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1960年 / 4卷 / 03期

关键词：

D O I：

10.1147/rd.43.0256

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：256 / 263

页数：8

相关论文

共 14 条

[1] A VAPOR-GROWN VARIABLE CAPACITANCE DIODE
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 280 - 282
[9] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS
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