ELECTRICAL PROPERTIES OF VAPOR-GROWN GE JUNCTIONS

被引：10

作者：

OROURKE, MJ

MARINACE, JC

ANDERSON, RL

WHITE, WH

机构：

来源：

关键词：

D O I：

10.1147/rd.43.0256

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：256 / 263

页数：8

共 14 条

[11] AVALANCHE BREAKDOWN IN GERMANIUM
MILLER, SL
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241
[12] THE EVOLUTION OF THE THEORY FOR THE VOLTAGE-CURRENT CHARACTERISTIC OF P-N JUNCTIONS
MOLL, JL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1076 - 1082
[13] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[14] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489