INCORPORATION OF AS INTO VAPOR-GROWN GE

被引：5

作者：

BAKER, WE

COMPTON, DMJ

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1960年 / 4卷 / 03期

关键词：

D O I：

10.1147/rd.43.0275

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

收藏

页码：275 / 279

页数：5

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共 13 条

[1] A VAPOR-GROWN VARIABLE CAPACITANCE DIODE
ANDERSON, RL
OROURKE, MJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 264 - 268
[2] RADIOTRACER STUDIES OF THE INCORPORATION OF IODINE INTO VAPOR-GROWN GE
BAKER, WE
COMPTON, DMJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 269 - 274
[3] INCORPORATION OF AU INTO VAPOR-GROWN GE
BAKER, WE
COMPTON, DMJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 296 - 298
[4] IMPURITY INTRODUCTION DURING EPITAXIAL GROWTH OF SILICON
GLANG, R
KIPPENHAN, BW
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 299 - 301
[5] FACETS AND ANOMALOUS SOLUTE DISTRIBUTIONS IN INDIUM-ANTIMONIDE CRYSTALS
HULME, KF
MULLIN, JB
[J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (47): : 1286 - 1288
[6] DISLOCATION CONTENT IN EPITAXIALLY VAPOR-GROWN GE CRYSTALS
INGHAM, HS
MCDADE, PJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 302 - 304
[7] EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS
MARINACE, JC
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 248 - 255
[8] ACTIVATION ANALYSIS OF TRACE IMPURITIES IN GERMANIUM USING SCINTILLATION SPECTROMETRY
MORRISON, GH
COSGROVE, JF
[J]. ANALYTICAL CHEMISTRY, 1956, 28 (03) : 320 - 323
[9] OROURKE O, 1960, IBM J RES DEV, V4, P256
[10] CORRELATION OF GEIGER COUNTER AND HALL EFFECT MEASUREMENTS IN ALLOYS CONTAINING GERMANIUM AND RADIOACTIVE ANTIMONY-124
PEARSON, GL
STRUTHERS, JD
THEUERER, HC
[J]. PHYSICAL REVIEW, 1950, 77 (06): : 809 - 813