OMVPE GROWTH OF GAXIN1-XP/GAAS(ALYGA1-YAS) HETEROSTRUCTURES FOR OPTICAL AND ELECTRONIC DEVICE APPLICATIONS

被引：22

作者：

SCHAUS, CF ^{[1
]}

SCHAFF, WJ ^{[1
]}

SHEALY, JR ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90324-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：360 / 366

页数：7

相关论文

共 25 条

[1] ARSENTEV IN, 1980, SOV PHYS SEMICOND+, V14, P1389
[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES
ASAHI, H
KAWAMURA, Y
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964
[3] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES
ASAI, H
OE, K
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2052 - 2056
[4] CASEY HC, 1978, HETEROSTRUCTURE LA B, P1
[5] ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP
CHEN, AB
SHER, A
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5360 - 5374
[6] COX HM, 1986, ELECTRON LETT, V21, P73
[7] GAINAS AND GAINASP MATERIALS GROWN BY LOW-PRESSURE MOCVD FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS
DUCHEMIN, JP
HIRTZ, JP
RAZEGHI, M
BONNET, M
HERSEE, SD
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 64 - 73
[8] INTERFACIAL RECOMBINATION VELOCITY DETERMINATION IN IN0.5GA0.5P-GAAS
ETTENBERG, M
NUESE, CJ
OLSEN, GH
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1288 - 1292
[9] THERMAL EXPANSION OF ALAS
ETTENBERG, M
PAFF, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +
[10] ELEMENTARY THEORY OF HETEROJUNCTIONS
HARRISON, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 1016 - 1021