PROTON-BOMBARDMENT IN INP

被引：74

作者：

DONNELLY, JP ^{[1
]}

HURWITZ, CE ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 08期

关键词：

D O I：

10.1016/0038-1101(77)90052-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：727 / 730

页数：4

相关论文

共 14 条

[1] BARRIER-FREE CONTACTS ON INDIUM PHOSPHIDE
BECKER, R
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1241 - 1249
[2] MULTIPLE-ENERGY PROTON-BOMBARDMENT IN N+-GAAS
DONNELLY, JP
LEONBERGER, FJ
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 183 - 189
[3] DONNELLY JP, 1976, 1976 P N AM S GAAS R
[4] DONNELLY JP, 1977, 1977 DEV RES C ITH
[5] OPTICAL AND ELECTRICAL PROPERTIES OF PROTON-BOMBARDED P-TYPE GAAS
DYMENT, JC
NORTH, JC
DASARO, LA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 207 - 213
[6] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION
DYMENT, JC
NORTH, JC
MILLER, BI
RIPPER, JE
DASARO, LA
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &
[7] ELECTRICAL PROPERTIES OF PROTON-BOMBARDED GA1-XALXAS
FAVENNEC, PN
DIGUET, D
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 546 - 547
[8] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT
FOYT, AG
LINDLEY, WT
WOLFE, CM
DONNELLY, JP
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &
[9] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711
[10] Jonscher A. K., 1972, J NONCRYST SOLIDS, V810, P293, DOI DOI 10.1016/0022-3093(72)90151-2