DISLOCATION STATES IN GALLIUM-ARSENIDE

被引：4

作者：

JONES, R

机构：

[1] Department of Physics, University of Exeter, Devon

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 01期

关键词：

D O I：

10.1080/13642817908245347

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The continued fraction method is used to study the electronic states associated with the 60° dislocations in gallium arsenide. Details of the cation and anion dislocation bands are given and the effects of the net dislocation core charge on the states emphasized. © 1979 Taylor & Francis Group, LLC.

引用

页码：21 / 25

页数：5

共 16 条

[1] ELECTRON-STATES ASSOCIATED WITH CORE REGION OF 60DEGREES DISLOCATION IN SILICON
ALSTRUP, I
MARKLUND, S
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (01): : 301 - 306
[2] The Effect of Plastic Bending on the Electrical Properties of Indium Antimonide
Bell, R. L.
Latkowski, R.
Willoughby, A. F. W.
[J]. JOURNAL OF MATERIALS SCIENCE, 1966, 1 (01) : 66 - 78
[3] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS
CHADI, DJ
COHEN, ML
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01): : 405 - 419
[4] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[5] DISSOCIATION OF NEAR-SCREW DISLOCATIONS IN GERMANIUM AND SILICON
GOMEZ, A
COCKAYNE, DJ
HIRSCH, PB
VITEK, V
[J]. PHILOSOPHICAL MAGAZINE, 1975, 31 (01): : 105 - 113
[6] EXTENDED DISLOCATIONS IN GERMANIUM
HAUSSERM.F
SCHAUMBU.H
[J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (03): : 745 - 751
[7] ELECTRONIC-STRUCTURE BASED ON LOCAL ATOMIC ENVIRONMENT FOR TIGHT-BINDING BANDS .2.
HAYDOCK, R
HEINE, V
KELLY, MJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (16): : 2591 - 2605
[8] ELECTRONIC-STRUCTURE BASED ON LOCAL ATOMIC ENVIRONMENT FOR TIGHT-BINDING BANDS
HAYDOCK, R
HEINE, V
KELLY, MJ
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (20): : 2845 - &
[9] DEFECTS IN SPHALERITE STRUCTURE
HOLT, DB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) : 1353 - &
[10] INTRINSIC SURFACE STATES OF (110) SURFACES OF GROUP IV AND III-V SEMICONDUCTORS
JOANNOPOULOS, JD
COHEN, ML
[J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5075 - 5081

← 1 2 →