DISLOCATION STATES IN GALLIUM-ARSENIDE

被引：4

作者：

JONES, R

机构：

[1] Department of Physics, University of Exeter, Devon

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 01期

关键词：

D O I：

10.1080/13642817908245347

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The continued fraction method is used to study the electronic states associated with the 60° dislocations in gallium arsenide. Details of the cation and anion dislocation bands are given and the effects of the net dislocation core charge on the states emphasized. © 1979 Taylor & Francis Group, LLC.

引用

页码：21 / 25

页数：5

共 16 条

[11] ELECTRONIC STATES ASSOCIATED WITH 60DEGREES EDGE DISLOCATION IN SILICON
JONES, R
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 57 - 64
[12] ELECTRONIC STATES ASSOCIATED WITH 60-DEGREE EDGE DISLOCATION IN GERMANIUM
JONES, R
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 677 - 683
[13] LOWTHER JE, 1977, PHYS REV B, V15, P3928, DOI 10.1103/PhysRevB.15.3928
[14] ELECTRON-STATES ASSOCIATED WITH CORE REGION OF 60-DEGREES-DISLOCATION IN SILICON AND GERMANIUM
MARKLUND, S
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 85 (02): : 673 - 681
[15] OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
RAY, ILF
COCKAYNE, DJ
[J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (178): : 853 - &
[16] RAY ILF, 1971, P ROY SOC LOND A MAT, V325, P534

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