THIN NITRIDE FILMS ON TEXTURED POLYSILICON TO INCREASE MULTIMEGABIT DRAM CELL CHARGE CAPACITY

被引：23

作者：

FAZAN, PC

LEE, RR

机构：

[1] Micron Technology, Inc., Boise

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 07期

关键词：

D O I：

10.1109/55.56474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a new technique to increase the charge storage capacity of advanced multimegabit DRAM's up to 34% without changing cell area or dielectric thickness. The technique does not require an additional masking step. A polysilicon texturing process is combined with a dielectric which has bulk-limited electrical conduction. The leakage current is not affected by this process and the field acceleration coefficient is considerably increased. © 1990 IEEE

引用

页码：279 / 281

页数：3

共 14 条

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