THERMAL SIO2-FILMS ON N+ POLYCRYSTALLINE SILICON - ELECTRICAL-CONDUCTION AND BREAKDOWN

被引：47

作者：

FARAONE, L ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1785 / 1794

页数：10

相关论文

共 27 条

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON
ANDERSON, RM
KERR, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836
[2] BAGLEE DA, 1983, VLSI ELECTRONICS MIC, V7, P165
[3] RAMP BREAKDOWN STUDY OF DOUBLE POLYSILICON RAMS AS A FUNCTION OF FABRICATION PARAMETERS
BROWN, DK
BARILE, CA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1597 - 1603
[4] Conti M., 1980, Insulating Films on Semiconductors, 1979, P55
[5] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON
DIMARIA, DJ
KERR, DR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507
[6] DUFFY MT, 1983, RCA REV, V44, P313
[7] SURFACE-ROUGHNESS AND ELECTRICAL-CONDUCTION OF OXIDE POLYSILICON INTERFACES
FARAONE, L
HARBEKE, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1410 - 1413
[8] CHARACTERIZATION OF THERMALLY OXIDIZED N+ POLYCRYSTALLINE SILICON
FARAONE, L
VIBRONEK, RD
MCGINN, JT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 577 - 583
[9] Faraone L., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P151
[10] Faraone L., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P111