CHARACTERIZATION OF THERMALLY OXIDIZED N+ POLYCRYSTALLINE SILICON

[1] CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3315 - 3316

[2] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[3] RAMP BREAKDOWN STUDY OF DOUBLE POLYSILICON RAMS AS A FUNCTION OF FABRICATION PARAMETERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1597 - 1603

[4] Conti M., 1980, Insulating Films on Semiconductors, 1979, P55

[5] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[6] DUFFY MT, 1983, RCA REV, V44, P313

[7] FARAONE L, UNPUB

[8] HARBEKE G, 1983, RCA REV, V44, P287

[9] HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 249 - 251

[10] ELECTRICAL-CONDUCTION AND BREAKDOWN IN OXIDES OF POLYCRYSTALLINE SILICON AND THEIR CORRELATION WITH INTERFACE TEXTURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6240 - 6245

[1] CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3315 - 3316

[2] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[3] RAMP BREAKDOWN STUDY OF DOUBLE POLYSILICON RAMS AS A FUNCTION OF FABRICATION PARAMETERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1597 - 1603

[4] Conti M., 1980, Insulating Films on Semiconductors, 1979, P55

[5] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507

[6] DUFFY MT, 1983, RCA REV, V44, P313

[7] FARAONE L, UNPUB

[8] HARBEKE G, 1983, RCA REV, V44, P287

[9] HIGH-QUALITY POLYSILICON BY AMORPHOUS LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 249 - 251

[10] ELECTRICAL-CONDUCTION AND BREAKDOWN IN OXIDES OF POLYCRYSTALLINE SILICON AND THEIR CORRELATION WITH INTERFACE TEXTURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6240 - 6245