SURFACE-ROUGHNESS AND ELECTRICAL-CONDUCTION OF OXIDE POLYSILICON INTERFACES

被引：32

作者：

FARAONE, L ^{[1
]}

HARBEKE, G ^{[1
]}

机构：

[1] LABS RCA LTD,CH-8048 ZURICH,SWITZERLAND

来源：

关键词：

D O I：

10.1149/1.2108900

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1410 / 1413

页数：4

共 24 条

[1] SI/SIO2 INTERFACE ROUGHNESS - STRUCTURAL OBSERVATIONS AND ELECTRICAL CONSEQUENCES
CARIM, AH
BHATTACHARYYA, A
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 872 - 874
[2] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON
DIMARIA, DJ
KERR, DR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 505 - 507
[3] DUFFY MT, 1983, RCA REV, V44, P313
[4] CHARACTERIZATION OF THERMALLY OXIDIZED N+ POLYCRYSTALLINE SILICON
FARAONE, L
VIBRONEK, RD
MCGINN, JT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 577 - 583
[5] FARAONE L, 1985, INSULATING FILMS SEM, P111
[6] FARAONE L, UNPUB IEEE T ELECTRO
[7] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE
GOODMAN, AM
[J]. PHYSICAL REVIEW, 1966, 144 (02): : 588 - &
[8] Hahn P. O., 1981, Insulating Films on Semiconductors. Proceedings of the Second International Conference, INFOS 81, P26
[9] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE
HAHN, PO
HENZLER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127
[10] HARBEKE G, 1983, RCA REV, V44, P287