INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE

被引：81

作者：

HAHN, PO

HENZLER, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4122 / 4127

页数：6

共 43 条

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J].

ANDERSEN, HH .

APPLIED PHYSICS, 1979, 18 (02) :131-140

[2] SIMS DEPTH PROFILING FOR THE CHARACTERIZATION OF SI-SIO2 STRUCTURES [J].

BARSONY, I ;

GIBER, J .

APPLIED SURFACE SCIENCE, 1980, 4 (01) :1-10

[3]

Bauer R.S., 1980, PHYSICS MOS INSULATO, P221

[4]

BAUER RS, 1978, PHYSICS SIO2 ITS INT, P401

[5] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY [J].

BLANC, J ;

BUIOCCHI, CJ ;

ABRAHAMS, MS ;

HAM, WE .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :120-122

[6] OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J].

CHANG, CC ;

BOULIN, DM .

SURFACE SCIENCE, 1977, 69 (02) :385-402

[7] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].

CHENG, YC ;

SULLIVAN, EA .

SURFACE SCIENCE, 1973, 34 (03) :717-731

[8] DETERMINATION OF SURFACE-STATES ON SI(111) BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J].

CLABES, J ;

HENZLER, M .

PHYSICAL REVIEW B, 1980, 21 (02) :625-631

[9] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[10] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

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