EXPERIMENTAL STUDY OF SPIN-LATTICE RELAXATION TIMES IN ARSENIC-DOPED SILICON

被引：19

作者：

CULVAHOUSE, JW

PIPKIN, FM

机构：

来源：

PHYSICAL REVIEW | 1958年 / 109卷 / 02期

关键词：

D O I：

10.1103/PhysRev.109.319

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：319 / 327

页数：9

共 19 条

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[4] FEHER, 1955, PHYS REV, V100, P1784
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[J]. PHYSICAL REVIEW, 1956, 103 (02): : 500 - 501
[6] FEHER G, COMMUNICATION
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[8] FLETCHER, 1954, PHYS REV, V95, P844
[9] PARAMAGNETIC RESONANCE IN AS-DOPED SILICON
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COMBRISSON, J
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[10] POLARIZATION OF ARSENIC NUCLEI IN A SILICON SEMICONDUCTOR
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