THE EFFECT OF RECONSTRUCTION ON RHEED INTENSITIES FOR THE GAAS(001)2X4 SURFACE

被引：11

作者：

KNIBB, MG

MAKSYM, PA

机构：

来源：

SURFACE SCIENCE | 1988年 / 195卷 / 03期

关键词：

D O I：

10.1016/0039-6028(88)90355-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：475 / 498

页数：24

共 20 条

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[8] STUDY OF THE RECONSTRUCTED GAAS(100) SURFACE [J].

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[9] ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES [J].

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