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A FAST METHOD OF CALCULATING AVALANCHE BREAKDOWN VOLTAGE OF SEMICONDUCTOR P-N-JUNCTION
被引:3
作者
:
AHMAD, S
论文数:
0
引用数:
0
h-index:
0
AHMAD, S
机构
:
来源
:
PROCEEDINGS OF THE IEEE
|
1981年
/ 69卷
/ 04期
关键词
:
D O I
:
10.1109/PROC.1981.11999
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:478 / 480
页数:3
相关论文
共 4 条
[1]
ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS
[J].
GRANT, WN
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引用数:
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h-index:
0
机构:
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
GRANT, WN
.
SOLID-STATE ELECTRONICS,
1973,
16
(10)
:1189
-1203
[2]
POWERSCHOTTKY DIODE DESIGN AND COMPARISON WITH JUNCTION DIODE
[J].
HOENEISEN, B
论文数:
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引用数:
0
h-index:
0
HOENEISEN, B
;
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
.
SOLID-STATE ELECTRONICS,
1971,
14
(12)
:1225
-+
[3]
SCHOREDER WE, 1971, P IEEE, V59, P1245
[4]
AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T)
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
GIBBONS, G
论文数:
0
引用数:
0
h-index:
0
GIBBONS, G
.
APPLIED PHYSICS LETTERS,
1966,
8
(05)
:111
-&
←
1
→
共 4 条
[1]
ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS
[J].
GRANT, WN
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
BELL TEL LABS, MURRAY HILL, NJ 07974 USA
GRANT, WN
.
SOLID-STATE ELECTRONICS,
1973,
16
(10)
:1189
-1203
[2]
POWERSCHOTTKY DIODE DESIGN AND COMPARISON WITH JUNCTION DIODE
[J].
HOENEISEN, B
论文数:
0
引用数:
0
h-index:
0
HOENEISEN, B
;
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
.
SOLID-STATE ELECTRONICS,
1971,
14
(12)
:1225
-+
[3]
SCHOREDER WE, 1971, P IEEE, V59, P1245
[4]
AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T)
[J].
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
;
GIBBONS, G
论文数:
0
引用数:
0
h-index:
0
GIBBONS, G
.
APPLIED PHYSICS LETTERS,
1966,
8
(05)
:111
-&
←
1
→