CARBON DOPING IN METALORGANIC VAPOR-PHASE EPITAXY

被引:50
作者
KUECH, TF
REDWING, JM
机构
[1] Department of Chemical Engineering, University of Wisconsin, Madison
基金
美国国家科学基金会;
关键词
D O I
10.1016/0022-0248(94)91080-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Carbon in metalorganic vapor phase epitaxy has been studied as both an unintentional and intentional dopant. It is generally an acceptor in most compound semiconductors with a very low thermal diffusion coefficient. Carbon limits the ultimate purity of the grown material when present as an unintentional impurity. Carbon can originate from the metal-organic compounds used in the growth of the materials and the study of carbon incorporation can lead to insights into the underlying chemical mechanisms of the metalorganic vapor phase epitaxy (MOVPE) growth process. The intentional doping of carbon in MOVPE, and allied technologies such as MOMBE, has replaced several of the traditional dopants for applications in heterojunction devices. This paper will review and discuss several of these aspects of carbon doping: the introduction of carbon into the growing layer, the properties of carbon in binary and alloy semiconductors, and device applications of carbon doping.
引用
收藏
页码:382 / 389
页数:8
相关论文
共 51 条
[1]  
ANNAPRAGADA AV, 1991, MATER RES SOC SYMP P, V222, P81, DOI 10.1557/PROC-222-81
[2]  
BACHEM KH, 1992, I PHYS C SER, V120, P293
[3]   CARBON INCORPORATION IN METAL-ORGANIC VAPOR-PHASE EPITAXY GROWN GAAS FROM CHXI4-X, HI, AND I2 [J].
BUCHAN, NI ;
KUECH, TF ;
SCILLA, G ;
CARDONE, F ;
POTEMSKI, R .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) :277-281
[4]   MASS-SPECTROMETRIC STUDIES OF TRIMETHYLINDIUM PYROLYSIS [J].
BUCHAN, NI ;
LARSEN, CA ;
STRINGFELLOW, GB .
JOURNAL OF CRYSTAL GROWTH, 1988, 92 (3-4) :591-604
[5]   CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY GROWN GAAS USING CHYX4-Y, TMG AND ASH3 [J].
BUCHAN, NI ;
KUECH, TF ;
SCILLA, G ;
CARDONE, F .
JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) :405-414
[6]  
COLE S, 1988, ELECTRON LETT, P929
[7]   MINORITY-CARRIER TRANSPORT IN CARBON DOPED GALLIUM-ARSENIDE [J].
COLOMB, CM ;
STOCKMAN, SA ;
VARADARAJAN, S ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1992, 60 (01) :65-67
[8]   CARBON-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING CARBON-TETRACHLORIDE AS A DOPANT SOURCE [J].
CUNNINGHAM, BT ;
STILLMAN, GE ;
JACKSON, GS .
APPLIED PHYSICS LETTERS, 1990, 56 (04) :361-363
[9]   ABSENCE OF C-13 INCORPORATION IN C-13CL4-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
CUNNINGHAM, BT ;
BAKER, JE ;
STOCKMAN, SA ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1990, 56 (18) :1760-1762
[10]   CARBON DIFFUSION IN UNDOPED, N-TYPE, AND P-TYPE GAAS [J].
CUNNINGHAM, BT ;
GUIDO, LJ ;
BAKER, JE ;
MAJOR, JS ;
HOLONYAK, N ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1989, 55 (07) :687-689