CHARACTERIZATION OF ZNO FILMS PREPARED BY DE REACTIVE MAGNETRON SPUTTERING AT DIFFERENT OXYGEN PARTIAL PRESSURES

被引:25
作者
MENG, LJ [1 ]
DOSSANTOS, MP [1 ]
机构
[1] UNIV MINHO,DEPT PHYS,P-4719 BRAGA,PORTUGAL
关键词
D O I
10.1016/0042-207X(95)00092-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO films have been deposited on the glass substrates by de reactive magnetron sputtering method at different oxygen partial pressures (5 x 10(-4) to 3 x 10(-3) mbar). The deposited films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance and reflectance, respectively. XRD results show that all the films are oriented with the c-axis perpendicular to the substrate. As oxygen partial pressure is increased, the grain size and diffraction peak intensify decrease. SEM results show that the films have columnar structure and the average crystallite dimension in the direction perpendicular to the c-axis decreases as oxygen partial pressure is increased. The film transmittance increases as oxygen partial pressure is increased. By comparing the diffuse transmittance and reflectance spectra of the films it has been found that the light loss in the film is mainly due to Rayleigh type scattering and the scattering decrease as the oxygen partial pressure is increased.
引用
收藏
页码:1001 / 1004
页数:4
相关论文
共 15 条
[11]   THICK-FILM ZNO RESISTIVE GAS SENSORS - ANALYSIS OF THEIR KINETIC-BEHAVIOR [J].
PIZZINI, S ;
BUTTA, N ;
NARDUCCI, D ;
PALLADINO, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) :1945-1948
[12]   ENHANCED PHOTOCURRENT ZNO/CDS/CUINSE2 SOLAR-CELLS [J].
POTTER, RR .
SOLAR CELLS, 1986, 16 (1-4) :521-527
[13]   DETERMINATION OF THE THICKNESS AND OPTICAL-CONSTANTS OF AMORPHOUS-SILICON [J].
SWANEPOEL, R .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1983, 16 (12) :1214-1222
[14]   RF PLANAR MAGNETRON SPUTTERED ZNO FILMS .1. STRUCTURAL-PROPERTIES [J].
VANDEPOL, FCM ;
BLOM, FR ;
POPMA, TJA .
THIN SOLID FILMS, 1991, 204 (02) :349-364
[15]  
1967, ASTM361451 JOINT COM