EFFICIENT ELECTROLUMINESCENCE FROM ZINC-DIFFUSED GA1-XALXAS DIODES AT 25 DEGREES C

被引：35

作者：

DIERSCHK.EG

STONE, LE

HAISTY, RW

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 04期

关键词：

D O I：

10.1063/1.1653851

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：98 / &

共 11 条

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[10] EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 DEGREES K FROM GA1-XALXAS P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY [J].

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