LIQUID-PHASE-EPITAXY HOMOSTRUCTURE PB-0.85SN-0.15TE DIODE-LASER WITH CONTROLLED CARRIER CONCENTRATION

被引：25

作者：

ORON, M

ZUSSMAN, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 01期

关键词：

D O I：

10.1063/1.91710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7 / 9

页数：3

共 10 条

[1] DOUBLE HETEROSTRUCTURE PB1-XSNX TE-PBTE LASERS WITH CW OPERATION AT 77 K [J].

GROVES, SH ;

NILL, KW ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1974, 25 (06) :331-333

[2] HOMOJUNCTION LEAD-TIN-TELLURIDE DIODE-LASERS WITH INCREASED FREQUENCY TUNING RANGE [J].

LO, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :591-595

[3]

Melngailis I., 1978, Physics of Narrow Gap Semiconductors, P459

[4] STRIPE-GEOMETRY PB1-XSNXTE DIODE LASERS [J].

RALSTON, RW ;

MELNGAILIS, I ;

CALAWA, AR ;

LINDLEY, WT .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :350-356

[5] DISLOCATION ETCH PITS IN LPE-GROWN PB1-XSNXTE (LTT) HETEROSTRUCTURES [J].

TAMARI, N ;

SHTRIKMAN, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5736-5742

[6] DOUBLE-HETEROSTRUCTURE PBSNTE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH CW OPERATION UP TO 114 K [J].

WALPOLE, JN ;

CALAWA, AR ;

HARMAN, TC ;

GROVES, SH .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :552-554

[7] MBE HOMOSTRUCTURE PBTE DIODE-LASERS WITH CW OPERATION UP TO 100 K [J].

WALPOLE, JN ;

GROVES, SH ;

HARMAN, TC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) :1214-1214

[8]

WALPOLE JN, 1973, J APPL PHYS, V44, P2909

[9]

WALPOLE JN, 1976, DEVICE RES C ITHACA

[10]

WALPOLE JN, ADA052463 DDC LINC L, P3

← 1 →