DC MOSFET DOPANT PROFILE METHOD

[1] DOPANT PROFILES DETERMINED FROM ENHANCEMENT-MODE MOSFET DC MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 848 - 850

[2] BUEHLER MG, 1976, NBS SPEC PUBL, V400, P22

[3] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[4] LIMITATION OF PULSED CAPACITANCE TECHNIQUE OF MEASURING IMPURITY PROFILES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1068 - +

[5] DC MEASUREMENT OF SPACE CHARGE CAPACITANCE AND IMPURITY PROFILE BENEATH GATE OF AN MOST [J]. SOLID-STATE ELECTRONICS, 1971, 14 (11) : 1099 - &

[6] SZE SM, 1969, PHYSICS SEMICONDUCTO

[7] DOUBLE BORON IMPLANT SHORT-CHANNEL MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 196 - 204

[8] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

[9] ZEIGLER K, 1975, SOLID STATE ELECTRON, V18, P189

[1] DOPANT PROFILES DETERMINED FROM ENHANCEMENT-MODE MOSFET DC MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 848 - 850

[2] BUEHLER MG, 1976, NBS SPEC PUBL, V400, P22

[3] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[4] LIMITATION OF PULSED CAPACITANCE TECHNIQUE OF MEASURING IMPURITY PROFILES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1068 - +

[5] DC MEASUREMENT OF SPACE CHARGE CAPACITANCE AND IMPURITY PROFILE BENEATH GATE OF AN MOST [J]. SOLID-STATE ELECTRONICS, 1971, 14 (11) : 1099 - &

[6] SZE SM, 1969, PHYSICS SEMICONDUCTO

[7] DOUBLE BORON IMPLANT SHORT-CHANNEL MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 196 - 204

[8] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

[9] ZEIGLER K, 1975, SOLID STATE ELECTRON, V18, P189