DOPANT PROFILES DETERMINED FROM ENHANCEMENT-MODE MOSFET DC MEASUREMENTS

[1] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5123 - 5128

[2] DOPING PROFILES BY MOSFET DEEP DEPLETION C(V) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) : 121 - 127

[3] PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1171 - +

[4] BUEHLER MG, 1976, NBS40022 SPEC PUBL

[5] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P40

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] GRAEME JG, 1973, APPLICATIONS OPERATI, P197

[8] GROVE AS, 1967, PHYS TECHNOL S, P159

[9] HILIBRAND J, 1960, RCA REV, V21, P245

[10] BULK LIFETIME DETERMINATION USING AN MOS CAPACITOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1849 - +

[1] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5123 - 5128

[2] DOPING PROFILES BY MOSFET DEEP DEPLETION C(V) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) : 121 - 127

[3] PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (11) : 1171 - +

[4] BUEHLER MG, 1976, NBS40022 SPEC PUBL

[5] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG, P40

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] GRAEME JG, 1973, APPLICATIONS OPERATI, P197

[8] GROVE AS, 1967, PHYS TECHNOL S, P159

[9] HILIBRAND J, 1960, RCA REV, V21, P245

[10] BULK LIFETIME DETERMINATION USING AN MOS CAPACITOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1849 - +