EFFECT OF RETARDING FIELD ON BASE TRANSPORT CHARACTERISTICS OF PLANAR TRANSISTORS

被引：6

作者：

BASAVARAJ, TN ^{[1
]}

BHATTACHARYYA, AB ^{[1
]}

机构：

[1] INDIAN INST TECHNOL, DEPT PHYS, NEW DELHI 29, INDIA

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 08期

关键词：

D O I：

10.1016/0038-1101(73)90099-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：921 / 929

页数：9

共 34 条

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