EFFECT OF RETARDING FIELD ON BASE TRANSPORT CHARACTERISTICS OF PLANAR TRANSISTORS

被引:6
作者
BASAVARAJ, TN [1 ]
BHATTACHARYYA, AB [1 ]
机构
[1] INDIAN INST TECHNOL, DEPT PHYS, NEW DELHI 29, INDIA
关键词
D O I
10.1016/0038-1101(73)90099-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:921 / 929
页数:9
相关论文
共 34 条
[1]  
ABRAMOWITZ M, 1965, HDB MATHEMATIC FUNCT
[2]  
BESKROVNYI IM, 1971, PHYSICS P N JUNCTION
[3]   EFFECTS OF IMPURITY DEIONIZATION AND TEMPERATURE ON CARRIER EQUIVALENT LIFETIME IN DIFFUSED SEMICONDUCTOR STRUCTURES [J].
BHATTACHARYYA, AB ;
BASAVARAJ, TN .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1050-+
[4]   SILICON P-N JUNCTION PHOTODIODE CHARACTERISTICS WITH VARIABLE DRIFT FIELD IN DIFFUSED REGION [J].
BHATTACHARYYA, AB ;
TAGORE, AK ;
BASAVARA, TN .
ELECTRONICS LETTERS, 1971, 7 (09) :231-+
[5]  
BHATTACHARYYA AB, 1973, IEEE T ELECTRON MAY
[6]  
BOOTHROYD AR, 1963, IEEE T ELECTRON DEV, VED10, P149
[7]   SIMPLE DETERMINATION OF BASE TRANSPORT FACTOR OF BIPOLAR TRANSISTORS [J].
DOWNING, JP ;
WHITTIER, RJ .
SOLID-STATE ELECTRONICS, 1971, 14 (03) :221-&
[8]  
GANDHI SK, 1968, THEORY PRACTICE MICR
[9]   COMPUTER-AIDED TRANSISTOR DESIGN CHARACTERIZATION AND OPTIMIZATION [J].
GHOSH, HN ;
DELAMONE.FH ;
DONO, NR .
SOLID-STATE ELECTRONICS, 1967, 10 (07) :705-&
[10]   NUMERICAL SOLUTIONS FOR A ONE-DIMENSIONAL SILICON N-P-N TRANSISTOR [J].
GOKHALE, BV .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (08) :594-&