FREELY-MIGRATING-DEFECT PRODUCTION DURING IRRADIATION AT ELEVATED-TEMPERATURES

被引：26

作者：

HASHIMOTO, T ^{[1
]}

REHN, LE ^{[1
]}

OKAMOTO, PR ^{[1
]}

机构：

[1] ARGONNE NATL LAB,DIV MAT SCI,ARGONNE,IL 60439

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.38.12868

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12868 / 12878

页数：11

共 26 条

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[3] KINETICS OF RADIATION-INDUCED SEGREGATION IN NI-12.7 AT-PERCENT SI [J].

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[4] ION-BEAM MIXING AT NICKEL-SILICON INTERFACES [J].

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[5]

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[6]

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[7]

HASHIMOTO T, 1987, ASTM STP, V955, P700

[8]

Hirano K., 1982, Point Defects and Defect Interactions in Metals. Proceedings of the Yamada Conference V, P541

[9] SOLUTE SEGREGATION IN METALS UNDER IRRADIATION [J].

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LAM, NQ .

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[10] ATOMIC REARRANGEMENTS IN ORDERED FCC ALLOYS DURING NEUTRON-IRRADIATION [J].

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