CRITICAL THICKNESS DETERMINATION OF INXGA1-XAS/GAAS STRAINED-LAYER SYSTEM BY TRANSMISSION ELECTRON-MICROSCOPY

被引：27

作者：

ZOU, J ^{[1
]}

USHER, BF ^{[1
]}

COCKAYNE, DJH ^{[1
]}

GLAISHER, R ^{[1
]}

机构：

[1] TELECOM AUSTRALIA RES LABS,CLAYTON 3168,AUSTRALIA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 10期

关键词：

CRITICAL THICKNESS; MISFIT DISLOCATION; TRANSMISSION ELECTRON MICROSCOPY; INXGA1-XAS/GAAS; STRAINED-LAYER SYSTEM;

D O I：

10.1007/BF02665974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The critical thicknesses of InxGa1-xAs/GaAs and GaAs/InxGa1-xAs/GaAs strained-layer systems were determined by transmission electron microscopy using the lift-off technique. The onset of misfit dislocation generation has been observed for the first time and the geometries of the misfit dislocations in both uncapped and capped layers correspond to the predicted models.1,2 A comparison is given between the predicted and experimental critical thicknesses.

引用

页码：855 / 859

页数：5

共 19 条

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