A SILICON CONDENSER MICROPHONE USING BOND AND ETCH-BACK TECHNOLOGY

被引：45

作者：

BERGQVIST, J ^{[1
]}

RUDOLF, F ^{[1
]}

机构：

[1] UNIV UPPSALA,DEPT ELECTR,S-75105 UPPSALA,SWEDEN

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1994年 / 45卷 / 02期

关键词：

BONDING TECHNIQUE; CONDENSER MICROPHONES; ETCH-BACK TECHNIQUE; SILICON;

D O I：

10.1016/0924-4247(94)00833-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technology for the fabrication of condenser microphones in silicon has been developed. Bond and etch-back techniques and surface micromachining of monocrystalline silicon allow for a highly simplified process. The fabrication process has been applied to a new microphone design with a highly perforated backplate in combination with a small air gap of 2.9 mum. Measurements with an external bias voltage of 10 V have resulted in remarkably high sensitivities of 10 to 15 mV Pa-1. A bandwidth of 17 kHz has been recorded, where the upper frequency limit is due to a combination of the backplate and diaphragm resonances. The measured equivalent sound-pressure noise is 30 dB(A). The modelling results from finite-element analysis and equivalent circuits are in good agreement with the measured data.

引用

页码：115 / 124

页数：10

共 24 条

[1] FINITE-ELEMENT MODELING AND CHARACTERIZATION OF A SILICON CONDENSER MICROPHONE WITH A HIGHLY PERFORATED BACKPLATE [J].