MEASUREMENT OF INP IN0.53GA0.47AS AND IN0.53GA0.47AS IN0.52AL0.48AS HETEROJUNCTION BAND OFFSETS BY X-RAY PHOTOEMISSION SPECTROSCOPY

被引：65

作者：

WALDROP, JR

KRAUT, EA

FARLEY, CW

GRANT, RW

机构：

[1] Rockwell International Science Center, Thousand Oaks

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.347724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoemission spectroscopy (XPS) has been used to measure the valence-band offset DELTA-E(v) for the lattice-matched InP/In0.53Ga0.47As and In0.53Ga0.47As/In0.52Al0.48As heterojunction interfaces. The heterojunctions were formed by molecular-beam epitaxy. We obtain values of DELTA-E(v) (InP/In0.53Ga0.47As) = 0.34 eV (DELTA-E(c)/DELTA-E(v) = 43/57) and DELTA-E(v) (In0.53Ga0.47As/In0.53Al0.48As) = 0.22 eV (DELTA-E(c)/DELTA-E(v) = 68/32) for the respective interfaces. By combining these measurements with available XPS DELTA-E(v) (InP/In0.52Al0.48 As) data we find that band offset transitivity is satisfied. Accordingly, the band offsets for heterojunction pairs formed from InP, In0.53Ga0.47As, and In0.52Al0.48As are not influenced by interface specific effects.

引用

收藏

页码：372 / 378

页数：7

相关论文

共 33 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2] PHOTOLUMINESCENCE MEASUREMENTS OF BAND DISCONTINUITY IN INP-INGAP AS HETEROSTRUCTURES [J].

BRUNEMEIER, PE ;

DEPPE, DG ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :755-757

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[4] AN N-IN0.53GA0.47AS-N-INP RECTIFIER [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5838-5842

[5] LP-MOCVD GROWTH AND CHARACTERIZATION OF UNDOPED AND MODULATION DOPED GAINASP-INP AND GAINAS/INP MULTI QUANTUM WELLS [J].

GRUTZMACHER, D ;

MEYER, R ;

ZACHAU, M ;

HELGESEN, P ;

ZRENNER, A ;

WOLTER, K ;

JURGENSEN, H ;

KOCH, F ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :382-388

[6] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

GULDNER, Y ;

VIEREN, JP ;

VOISIN, P ;

VOOS, M ;

RAZEGHI, M ;

POISSON, MA .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :877-879

[7]

HASSE MA, 1989, APPL PHYS LETT, V54, P1457

[8] APPLICATION OF ASYMMETRICAL GAUSSIAN LORENTZIAN MIXED-FUNCTION FOR X-RAY PHOTOELECTRON CURVE SYNTHESIS [J].

KOJIMA, I ;

KURAHASHI, M .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1987, 42 (02) :177-181

[9] PROTECTION OF MOLECULAR-BEAM EPITAXY GROWN ALXGA1-XAS EPILAYERS DURING AMBIENT TRANSFER [J].

KOWALCZYK, SP ;

MILLER, DL ;

WALDROP, JR ;

NEWMAN, PG ;

GRANT, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02) :255-256

[10] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

KRAUT, EA ;

GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP .

PHYSICAL REVIEW B, 1983, 28 (04) :1965-1977

← 1 2 3 4 →