LP-MOCVD GROWTH AND CHARACTERIZATION OF UNDOPED AND MODULATION DOPED GAINASP-INP AND GAINAS/INP MULTI QUANTUM WELLS

被引：11

作者：

GRUTZMACHER, D ^{[1
]}

MEYER, R ^{[1
]}

ZACHAU, M ^{[1
]}

HELGESEN, P ^{[1
]}

ZRENNER, A ^{[1
]}

WOLTER, K ^{[1
]}

JURGENSEN, H ^{[1
]}

KOCH, F ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS E16,D-8046 GARCHING,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-0248(88)90557-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：382 / 388

页数：7

共 19 条

[1] ANDRE JP, 1987, I PHYS C SER, V83
[2] ENERGY-LEVELS AND ALLOY SCATTERING IN INP-IN (GA)AS HETEROJUNCTIONS
BASTARD, G
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 591 - 593
[3] CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES
BIMBERG, D
CHRISTEN, J
FUKUNAGA, T
NAKASHIMA, H
MARS, DE
MILLER, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1191 - 1197
[4] BRUM JA, 1985, J PHYS C, V18, P789
[5] INGAASP DISTRIBUTED FEEDBACK MULTIQUANTUM WELL LASER
DUTTA, NK
NAPHOLTZ, SG
PICCIRILLI, AB
PRZYBYLEK, G
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1419 - 1421
[6] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITIES OF INGAASP INP HETEROJUNCTIONS USING CAPACITANCE VOLTAGE ANALYSIS
FORREST, SR
SCHMIDT, PH
WILSON, RB
KAPLAN, ML
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 37 - 44
[7] GRUTZMACHER D, 1988, APPL PHYS LETT, V52, P872, DOI 10.1063/1.99258
[8] GRUTZMACHER D, 1988, I PHYS C SER, V91
[9] MASS-SPECTROMETRIC INVESTIGATION OF GAS SWITCHING IN AN INGAASP MOVPE SYSTEM
HASPEKLO, H
KONIG, U
HEYEN, M
JURGENSEN, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 79 - 84
[10] TRANSPORT-PROPERTIES AND PERSISTENT PHOTOCONDUCTIVITY IN INP/IN0.53GA0.47AS MODULATION-DOPED HETEROJUNCTIONS
KANE, MJ
ANDERSON, DA
TAYLOR, LL
BASS, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) : 657 - 664